IPB057N06N - Power-Transistor

Features

Optimized for synchronous rectification.
100% avalanche tested.
Superior thermal resistance.
N-channel, normal level.
Qualified according to JEDEC1) for target.

IPB057N06N power-transistor by Infineon Technologies - Datasheet Preview

Datasheet Details

Part number	IPB057N06N
Manufacturer	Infineon
File Size	548.28 KB
Description	Power-Transistor
Datasheet	IPB057N06N Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IPB057N06N	N-Channel MOSFET	INCHANGE
IPB057N15NM6	150V MOSFET	Infineon
IPB050N06N	Power-Transistor	Infineon
IPB051NE8N	Power-Transistor	Infineon
IPB051NE8NG	Power-Transistor	Infineon

Other Datasheets by Infineon

Part Number	Description
IPB050N06NG	Power-Transistor
IPB052N04NG	Power-Transistor
IPB055N03LG	MOSFET
IPB05N03LAG	Power-Transistor
IPB05N03LB	Power-Transistor

Full PDF Text Transcription

Click to expand full text

Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) IPB057N06N 60 V 5.

Published: Nov 12, 2015 |