Datasheet4U Logo Datasheet4U.com

IPB057N15NM6 - 150V MOSFET

Description

1 Maximum ratings 3 T

Features

  • N‑channel.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB057N06N Power-Transistor Infineon Technologies
IPB057N06N N-Channel MOSFET INCHANGE
IPB050N06NG Power-Transistor Infineon Technologies
IPB052N04NG Power-Transistor Infineon Technologies
IPB054N06N3 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB050N06N Power-Transistor
IPB051NE8N Power-Transistor
IPB051NE8NG Power-Transistor
IPB052N04N Power-Transistor
IPB054N06N3 Power-Transistor

Full PDF Text Transcription

Click to expand full text
Public IPB057N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS 150 V RDS(on),max 5.7 mΩ ID 128 A Qoss 132 nC QG 44 nC Qrr (500A/μs) 131 nC Type / Ordering code IPB057N15NM6 Package PG‑TO263‑3 D²PAK tab 2 1 3 32 1 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 057N15N6 Related links ‑ Datasheet https://www.infineon.com 1 Revision 1.
Published: |