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IPB051NE8NG - Power-Transistor

Download the IPB051NE8NG datasheet PDF. This datasheet also covers the IPB051NE8N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB051NE8N-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPB050N06NG Power-Transistor Infineon Technologies
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Other Datasheets by Infineon

Part Number Description
IPB051NE8N Power-Transistor
IPB050N06N Power-Transistor
IPB052N04N Power-Transistor
IPB054N06N3 Power-Transistor
IPB054N06N3G Power-Transistor

Full PDF Text Transcription

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IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.
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