The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BFR280W
NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile
3
communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz
F = 1.5 dB at 900 MHz
2 1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR280W
Maximum Ratings Parameter
Marking REs 1=B
Pin Configuration 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT323
Value Unit
3=C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS = 115 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance
8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ...
BFR280W Datasheet
