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BFR280
NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile
3
communications systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz
F = 1.5 dB at 900 MHz
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR280
Maximum Ratings Parameter
Marking REs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT23
Value Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 116 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance
8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ...
BFR280 Datasheet
