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BFR181 - Low Noise Silicon Bipolar RF Transistor

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Datasheet Details

Part number BFR181
Manufacturer Infineon Technologies AG
File Size 607.98 KB
Description Low Noise Silicon Bipolar RF Transistor
Datasheet download datasheet BFR181 Datasheet

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR181 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181 Marking Pin Configuration RFs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 91 °C Junction temperature Ambient temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA 12 20 20 2 20 2 175 150 -65 ...
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