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BFR181T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
3
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR181T
Maximum Ratings Parameter
Marking RFs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 20 2 175 150 mW °C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 79°C 1) Junction temperature Ambient temperature Storage temperature
-65 ... 150 -65 ...
BFR181T Datasheet
