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IRF626 - N-Channel Mosfet Transistor

Features

  • RDS(on) =1.1Ω.
  • 3.8A and 275V.
  • single pulse avalanche energy rated.
  • SOA is Power- Dissipation Limited.
  • Linear Transfer Characteristics.
  • High Input Impedance isc Product Specification IRF626.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =1.1Ω ·3.8A and 275V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance isc Product Specification IRF626 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 275 ±20 V V ID Drain Current-Continuous 3.8 A IDM Drain Current-Single Plused 15 A PD Total Dissipation @TC=25℃ 40 W Tj Max.
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