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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =1.5Ω ·3.3A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance
isc Product Specification
IRF625
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
250 ±20
V V
ID Drain Current-Continuous
3.3 A
IDM Drain Current-Single Plused
13 A
PD Total Dissipation @TC=25℃
40 W
Tj Max.
IRF625 Datasheet
