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BUW64B - Silicon NPN Power Transistors

Download the BUW64B datasheet PDF (BUW64A included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon npn power transistors.

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters,

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Note: The manufacturer provides a single datasheet file (BUW64A-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW64A 140 VCEV Collector-Emitter Voltage VBE= -1.
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