BUW12F - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 6A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast

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BUW12F silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BUW12F
Manufacturer	Inchange Semiconductor
File Size	216.20 KB
Description	Silicon NPN Power Transistor
Datasheet	BUW12F Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications.

Published: Sep 2, 2016 |