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BUW12 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 6A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast

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isc Silicon NPN Power Transistor BUW12 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications.
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