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BUW64A - Silicon NPN Power Transistors

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters,

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isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW64A 140 VCEV Collector-Emitter Voltage VBE= -1.
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