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BUV37 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS

Designed for use in automotive ignition circuits.

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Datasheet Details

Part number BUV37
Manufacturer Inchange Semiconductor
File Size 138.13 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BUV37 Datasheet
Additional preview pages of the BUV37 datasheet.

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV37 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS ·Designed for use in automotive ignition circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current - Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 8 15 30 4 100 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.
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