BUV22 - Silicon NPN Power Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS

applications.

Inchange Semiconductor

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Datasheet Details

Part number	BUV22
Manufacturer	Inchange Semiconductor
File Size	188.47 KB
Description	Silicon NPN Power Transistor
Datasheet	BUV22 Datasheet
Additional preview pages of the BUV22 datasheet.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV22 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.

Published: Oct 25, 2016 |