Datasheet4U Logo Datasheet4U.com

BUV10 - Silicon NPN Power Transistor

Description

High Switching Speed High Current Capability APPLICATIONS

Designed for high current,high speed,high power applications.

📥 Download Datasheet

Datasheet preview – BUV10

Datasheet Details

Part number BUV10
Manufacturer Inchange Semiconductor
File Size 111.10 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BUV10 Datasheet
Additional preview pages of the BUV10 datasheet.

📁 Similar Datasheet

  • BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package (Seme LAB)
  • BUV11 - 20 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)
  • BUV11 - SITCHMODE Series NPN Silicon Power Transistor (ON Semiconductor)
  • BUV12 - Bipolar NPN Device (Seme LAB)
  • BUV12 - NPN Transistor (INCHANGE)
  • BUV18 - NPN High Current Switching Transistors (ST Microelectronics)
  • BUV18 - NPN HIGH CURENT SWITCHING TRANSISTORS (Seme LAB)
  • BUV18X - Bipolar NPN Device (Seme LAB)
  • BUV19 - NPN HIGH CURENT SWITCHING TRANSISTORS (Seme LAB)
  • BUV19 - NPN High Current Switching Transistors (ST Microelectronics)
Other Datasheets by Inchange Semiconductor
  • BUV18 - Silicon NPN Power Transistor
  • BUV19 - Silicon NPN Power Transistor
  • BUV20 - Silicon NPN Power Transistor
  • BUV22 - Silicon NPN Power Transistor
  • BUV24 - Silicon NPN Power Transistor
  • BUV26AF - Silicon NPN Power Transistors
  • BUV26F - Silicon NPN Power Transistors
  • BUV28AF - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
Published: |