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BDY96D - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators app

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators applications.
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