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3DD8F - Silicon NPN Power Transistor

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Part number 3DD8F
Manufacturer Inchange Semiconductor
File Size 184.67 KB
Description Silicon NPN Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ Junct

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