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3DD100 - NPN Silicon Low Frequency High Power Transistor

Key Features

  • 1. Using triple-diffusion process. Excellent capacity in anti-burnout. Excellent second breakdown capacity. 2. Good temperature stability. Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 for 3DD100 and 3DD101. 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP for all, JT, JCT, GS, G, G+ for 3DD100 and 3DD101.

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Datasheet Details

Part number 3DD100
Manufacturer Shaanxi Qunli Electric
File Size 30.43 KB
Description NPN Silicon Low Frequency High Power Transistor
Datasheet download datasheet 3DD100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 for 3DD100 and 3DD101. 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP for all, JT, JCT, GS, G, G+ for 3DD100 and 3DD101. TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V Emitter-Base Voltage Max. Collector Current VEBO ICM V A Max.