Datasheet Details
| Part number | 3DD8E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 3DD8E Datasheet
|
|
|
| Part number | 3DD8E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
3DD8E Datasheet
|
|
|
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ Junct
📁 Similar Datasheet