Datasheet4U Logo Datasheet4U.com

2SA1147 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) High Power Dissipation Complement to Type 2SC2707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applicat

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1147 SILICON POWER TRANSISTOR SavantIC
2SA1141 SILICON POWER TRANSISTOR SavantIC
2SA1142 SILICON POWER TRANSISTOR SavantIC
2SA1144 Silicon PNP Epitaxial Type Transistor Toshiba
2SA1145 TRANSISTOR Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1141 POWER TRANSISTOR
2SA1142 POWER TRANSISTOR
2SA1146 POWER TRANSISTOR
2SA1102 POWER TRANSISTOR
2SA1103 POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Complement to Type 2SC2707 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SA1147 isc website：www.iscsemi.
Published: |