Datasheet4U Logo Datasheet4U.com

2SA1142 - POWER TRANSISTOR

Description

Low Collector Saturation Voltage High voltage,fT Complement to Type 2SC2682 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1142 SILICON POWER TRANSISTOR SavantIC
2SA1141 SILICON POWER TRANSISTOR SavantIC
2SA1144 Silicon PNP Epitaxial Type Transistor Toshiba
2SA1145 TRANSISTOR Toshiba Semiconductor
2SA1145 PNP Transistor INCHANGE

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1141 POWER TRANSISTOR
2SA1146 POWER TRANSISTOR
2SA1147 POWER TRANSISTOR
2SA1102 POWER TRANSISTOR
2SA1103 POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor 2SA1142 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage,fT ·Complement to Type 2SC2682 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.2 w 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |