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2SA1146 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO=- 140V(Min) Complement to Type 2SC2706 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency low power amplifier applications Recommend for 70W audio frequency amplifie

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=- 140V(Min) ·Complement to Type 2SC2706 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1146 isc website：www.iscsemi.
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