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2SA1096 - POWER TRANSISTOR

Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) Good Linearity of hFE Complement to Type 2SC2497 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM R

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isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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