Datasheet4U Logo Datasheet4U.com

2SA1095 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) Good Linearity of hFE Complement to Type 2SC2565 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity aud

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1095 Silicon PNP Transistor Toshiba
2SA1095 SILICON POWER TRANSISTOR SavantIC
2SA1090 Silicon PNP transistor Toshiba
2SA1091 TRANSISTOR Toshiba Semiconductor
2SA1091 Silicon PNP transistor BLUE ROCKET ELECTRONICS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1093 POWER TRANSISTOR
2SA1094 Power Transistor
2SA1096 POWER TRANSISTOR
2SA1096A POWER TRANSISTOR
2SA1001 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2565 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1095 isc website：www.iscsemi.
Published: |