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IXYK110N120C4 - IGBT

Features

  • Optimized for Low Switching Losses.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Datasheet preview – IXYK110N120C4

Datasheet Details

Part number IXYK110N120C4
Manufacturer IXYS
File Size 1.42 MB
Description IGBT
Datasheet download datasheet IXYK110N120C4 Datasheet
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1200V XPTTM Gen 4 IGBT High Speed IGBT for up to 20-50kHz Switching IXYK110N120C4 VCES = 1200V I = 110A C110 V  2.40V CE(sat) tfi(typ) = 37ns Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J TJM Tstg TL TSOLD FC Weight Test Conditions T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Force Maximum Ratings 1200 V 1200 V ±20 V ±30 V 310 A 160 A 110 A 740 A ICM = 220 A 0.8 • V V CES 1360 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.
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