IXYK100N120C3 - High-Speed IGBT

Features

Optimized for Low Switching Losses.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
Avalanche Rated.
High Current Handling Capability.
International Standard Packages Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXYK100N120C3
Manufacturer	IXYS
File Size	295.46 KB
Description	High-Speed IGBT
Datasheet	IXYK100N120C3 Datasheet
Additional preview pages of the IXYK100N120C3 datasheet.

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Full PDF Text Transcription

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1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYK100N120C3 IXYX100N120C3 VCES = 1200V IC110 = 100A V CE(sat)  3.50V tfi(typ) = 110ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C 195 A 160 A 100 A 460 A 50 A 1.2 J ICM = 200 A  @VCE VCES 1150 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Jul 21, 2016 |