IXYK100N65B3D1 - IGBT

Features

International Standard Packages.
Optimized for 10-30kHz Switching.
Square RBSOA.
Avalanche Rated.
Short Circuit Capability.
Anti-Parallel Ultra Fast Diode.
High Current Handling Capability Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXYK100N65B3D1
Manufacturer	IXYS
File Size	223.56 KB
Description	IGBT
Datasheet	IXYK100N65B3D1 Datasheet
Additional preview pages of the IXYK100N65B3D1 datasheet.

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Full PDF Text Transcription

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65B3D1 IXYX100N65B3D1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 650V 100A 1.85V 73ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C 225 160 100 67 460 50 600 ICM = 200 @VCE VCES 8 830 -55 ... +175 175 -55 ...

Published: Jul 21, 2016 |