IXYH30N120C4H1 - Gen4 IGBT

Description

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.

Features

& Benefits:.
Optimized for 20.
50 kHz Switching.
High Surge Current Capability.
Square RBSOA.
International Standard Package.
Anti-Parallel Sonic Diode.

IXYS

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Datasheet Details

Part number	IXYH30N120C4H1
Manufacturer	IXYS
File Size	0.97 MB
Description	Gen4 IGBT
Datasheet	IXYH30N120C4H1 Datasheet
Additional preview pages of the IXYH30N120C4H1 datasheet.

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Full PDF Text Transcription

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IXYH30N120C4H1 1200 V, 30 A XPTTM Gen4 IGBT with Sonic Diode Extreme Light Punch Through IGBT for 20–50 kHz Switching IGBT Datasheet Pinout Diagram (TO-247-3L) Tab C G E GC E G: Gate; C: Collector; E: Emitter; Tab: Collector Description: Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.

Published: Feb 25, 2025 |