IXYH30N120B4 - High-Speed Low-Vsat PT IGBT

Features

Optimized for Low Conduction Switching Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXYH30N120B4
Manufacturer	IXYS
File Size	260.52 KB
Description	High-Speed Low-Vsat PT IGBT
Datasheet	IXYH30N120B4 Datasheet
Additional preview pages of the IXYH30N120B4 datasheet.

📁 Similar Datasheet

IXYH20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYH50N120C3 - High-Speed IGBT (IXYS Corporation)
IXYH50N120C3D1 - High-Speed IGBT (IXYS Corporation)
IXYH82N120C3 - 1200V XPT IGBT (IXYS Corporation)
IXYA20N120C3HV - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYB82N120C3H1 - High-Speed IGBT (IXYS Corporation)
IXYP20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)

Other Datasheets by IXYS

IXYH30N120A4 - Ultra Low-Vsat PT IGBT
IXYH30N120C3 - High-Speed IGBT
IXYH30N120C3D1 - IGBT
IXYH30N120C4 - High-Speed Low-Vsat PT IGBT
IXYH30N120C4H1 - Gen4 IGBT
IXYH30N170C - High Voltage IGBT
IXYH30N450HV - IGBT
IXYH30N65B3D1 - IGBT

Full PDF Text Transcription

Click to expand full text

Advance Technical Information 1200V XPTTM GenX4TM IGBT IXYH30N120B4 High-Speed Low-Vsat PT IGBT for up to 5-30kHz Switching VCES = 1200V IC110 = 30A V CE(sat)  2.1V tfi(typ) = 108ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C 100 A 30 A 174 A ICM = 60 A  VCE 0.8 • VCES 500 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque 1.13/10 Nm/lb.in.

Published: Feb 16, 2025 |