IXYH30N120C4 - High-Speed Low-Vsat PT IGBT

Features

Optimized for Low Switching Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXYH30N120C4
Manufacturer	IXYS
File Size	260.25 KB
Description	High-Speed Low-Vsat PT IGBT
Datasheet	IXYH30N120C4 Datasheet
Additional preview pages of the IXYH30N120C4 datasheet.

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Full PDF Text Transcription

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Advance Technical Information 1200V XPTTM GenX4TM IGBT IXYH30N120C4 High-Speed Low-Vsat PT IGBT for up to 20-50kHz Switching VCES = 1200V IC110 = 30A V CE(sat)  2.4V tfi(typ) = 53ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C 94 A 30 A 166 A ICM = 60 A  VCE 0.8 • VCES 500 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque 1.13/10 Nm/lb.in.

Published: Feb 10, 2025 |