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IXTV02N250S - High Voltage Power MOSFETs

Download the IXTV02N250S datasheet PDF. This datasheet also covers the IXTA02N250 variant, as both devices belong to the same high voltage power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA02N250-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTV18N60P N-Channel MOSFET INCHANGE
IXTV200N10T Power MOSFET IXYS Corporation
IXTV200N10TS Power MOSFET IXYS Corporation
IXTV22N50P N-Channel MOSFET INCHANGE
IXTV22N60P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTV03N400S High Voltage Power MOSFETs
IXTV102N20T Power MOSFET
IXTV18N60P Power MOSFET
IXTV18N60PS Power MOSFET
IXTV22N50P Power MOSFET

Full PDF Text Transcription

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High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 Maximum Ratings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 1.13 / 10 11..65 / 25..14.6 °C °C Nm/lb.in N/lb.
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