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PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-220
Maximum Ratings
600
V
600
V
30
V
40
V
1.4
A
2.1
A
1.4
A
75
mJ
10
V/ns
50
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
0.40
g
0.35
g
3.
IXTU1R4N60P Datasheet
