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IXTU01N100 - Power MOSFET

Download the IXTU01N100 datasheet PDF. This datasheet also covers the IXTY01N100 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Fast Switching Times.
  • Avalanche Rated.
  • Rds(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY01N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTU05N100 N-Channel MOSFET INCHANGE
IXTU05N100 Power MOSFET IXYS
IXTU12N06T N-Channel MOSFET INCHANGE
IXTU12N06T Power MOSFET IXYS
IXTU1N80P Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTU01N100D N-Channel MOSFET
IXTU01N80 Power MOSFET
IXTU02N50D Power MOSFET
IXTA05N100 Power MOSFET
IXTA08N50D2 N-Channel MOSFET

Full PDF Text Transcription

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High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 20 V 30 V 100 mA 400 mA 25 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.40 g 0.
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