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IXTU01N80 - Power MOSFET

Download the IXTU01N80 datasheet PDF. This datasheet also covers the IXTY01N80 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 25 µA V DS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V International standard packages JEDEC TO-251 AA, TO-252 AA l Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY01N80_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTU05N100 N-Channel MOSFET INCHANGE
IXTU05N100 Power MOSFET IXYS
IXTU12N06T N-Channel MOSFET INCHANGE
IXTU12N06T Power MOSFET IXYS
IXTU1N80P Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTU01N100 Power MOSFET
IXTU01N100D N-Channel MOSFET
IXTU02N50D Power MOSFET
IXTA05N100 Power MOSFET
IXTA08N50D2 N-Channel MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 800 800 ±20 ±30 100 400 25 -55 ... +150 150 -55 ... +150 V V TO-251 AA VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C; TJ = 25°C to 150°C TC = 25°C, pulse width limited by max. TJ TC = 25°C G V V mA mA W °C °C °C °C g D S D (TAB) TO-252 AA 1.6 mm (0.063 in) from case for 5 s 300 0.8 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.
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