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Preliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T
VDSS = ID25 =
RDS(on) ≤
150V 90A 20mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
TC = 25°C *
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = TC =
25°C 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
150 150
± 30
90 75 250
4 750
10
455
-55 ... +175 175
-55 ... +175
1.6mm (0.062 in.) from case for 10s
300
Plastic body for 10 seconds
260
Mounting Torque(TO-220,TO-3P,TO-247)
1.13/10
Mounting Force (TO-263)
10..65/2.2..14.6
TO-263
2.5
TO-220
3
TO-3P
5.
IXTP90N15T Datasheet
