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Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA90N055T IXTP90N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 V 90 A 8.8 m Ω
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 10 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings
55 V 55 V
± 20
90 75 240
25 400
V
A A A
A mJ
TO-263 (IXTA)
G S
TO-220 (IXTP)
(TAB)
3 V/ns
176 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
IXTP90N055T Datasheet
