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Advance Technical Information
TrenchMVTM Power MOSFET
IXTA98N075T IXTP98N075T
N-Channel Enhancement Mode
VDSS = ID25 =
RDS(on) ≤
75 V 98 A 10 mΩ
Symbol VDSS VDGR VGSM I
D25
ILRMS IDM dv/dt
IAR E
AS
Pd TJ TJM Tstg TL TSOLD Md
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
T C
= 25°C
Package Current Limit (RMS):
TC = 25°C, pulse width limited by TJM
I
S
≤
I, DM
di/dt
≤
100
A/μs,
V DD
≤
V DSS
T J
≤
175°C,
R G
=
5
Ω
TC = 25°C
T C
= 25°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings 75 V 75 V
± 20 V 98 A 75 A
280 A
5 V/ns
25 A 600 mJ
230 -55 ... +175
175 -40 ... +175
W
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
3.0 g 2.
IXTP98N075T Datasheet
