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IXTP28P065T - Power MOSFET

Download the IXTP28P065T datasheet PDF. This datasheet also covers the IXTA28P065T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. - 65 V - 2.5 - 4.5 V ±50 nA - 3 μA -100 μA 45 mΩ Advantages z Easy to Mount z Space Sav.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA28P065T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA28P065T IXTP28P065T VDSS = ID25 = ≤ RDS(on) - 65V - 28A 45mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA ES PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-220 TO-263 Maximum Ratings - 65 V - 65 V ±15 V ±25 V - 28 A - 90 A - 28 A 200 mJ 83 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3.0 g 2.
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