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IXTP200N085T - Power MOSFET

Download the IXTP200N085T datasheet PDF. This datasheet also covers the IXTA200N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA200N085T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP200N085T N-Channel MOSFET INCHANGE
IXTP200N055T2 N-Channel MOSFET INCHANGE
IXTP200N075T N-Channel MOSFET INCHANGE
IXTP20N65X N-Channel MOSFET INCHANGE
IXTP20N65XM N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP200N055T2 Power MOSFET
IXTP200N075T Power MOSFET
IXTP20N65X Power MOSFET
IXTP20N65XM Power MOSFET
IXTP220N04T2 Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.
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