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IXTP20N65X - Power MOSFET

Download the IXTP20N65X datasheet PDF. This datasheet also covers the IXTA20N65X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.5 V 100 nA 5 A 50 A 210 m Advantages.
  • High Power Density.
  • Easy to Mou.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA20N65X-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTA20N65X IXTP20N65X IXTH20N65X VDSS = ID25 = RDS(on) 650V 20A 210m TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM IS  ID25, VDD  VDSS, TJ  150°C TC = 25C 20 40 30 320 -55 ... +150 150 -55 ... +150 A A V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
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