IXTH130N20T - Power MOSFET

This page provides the datasheet information for the IXTH130N20T, a member of the IXTQ130N20T Power MOSFET family.

Datasheet Summary

Features

High Current Handling Capability.
Avalanche Rated.
Fast Intrinsic rectifier.
Low RDS(on) Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXTH130N20T
Manufacturer	IXYS
File Size	178.15 KB
Description	Power MOSFET
Datasheet	IXTH130N20T Datasheet
Additional preview pages of the IXTH130N20T datasheet.

📁 Similar Datasheet

IXTH130N20T - N-Channel MOSFET (INCHANGE)
IXTH130N10T - Power MOSFET (IXYS Corporation)
IXTH130N10T - N-Channel MOSFET (INCHANGE)
IXTH130N15T - N-Channel MOSFET (INCHANGE)
IXTH102N15T - N-Channel MOSFET (INCHANGE)
IXTH102N20T - N-Channel MOSFET (INCHANGE)
IXTH10N100 - MOSFET (IXYS Corporation)
IXTH10P50 - P-Channel MOSFET (IXYS Corporation)
IXTH110N10L2 - N-Channel MOSFET (INCHANGE)
IXTH11N80 - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS

IXTH130N15T - Power MOSFET
IXTH130N15X4 - Power MOSFET
IXTH13N80 - MegaMOS FET
IXTH102N15T - Power MOSFET
IXTH102N20T - Power MOSFET
IXTH10N100D2 - Depletion Mode MOSFET
IXTH10P50P - Power MOSFET
IXTH10P60 - Power MOSFET

Full PDF Text Transcription

Click to expand full text

TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings 200 V 200 V  20 V  30 V 130 A 75 A 320 A 4 A 1 J 10 V/ns 830 W -55 ... +175 175 -55 ... +175 300 260  C  C  C °C °C 1.13 / 10 5.5 6.0 Nm/lb.

Published: Nov 12, 2020 |