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Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTT10P60 IXTH10P60
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
- 600
V
- 600
V
±20
V
±30
V
- 10
A
- 40
A
- 10
A
3
J
300
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
4
g
6
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = 0.
IXTH10P60 Datasheet
