IXTH130N10T - N-Channel MOSFET

Datasheet Summary

Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation IXTH130N10T.

INCHANGE

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Datasheet Details

Part number	IXTH130N10T
Manufacturer	INCHANGE
File Size	256.37 KB
Description	N-Channel MOSFET
Datasheet	IXTH130N10T Datasheet
Additional preview pages of the IXTH130N10T datasheet.

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation IXTH130N10T ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 300 PD Total Dissipation 360 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.42 UNIT ℃/W isc website：www.iscsemi.

Published: Oct 7, 2020 |