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IXGX64N60B3D1 - Medium speed low Vsat PT IGBT

Download the IXGX64N60B3D1 datasheet PDF. This datasheet also covers the IXGK64N60B3D1 variant, as both devices belong to the same medium speed low vsat pt igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGK64N60B3D1-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX60N60C2D1 IGBT
IXGX120N120A3 Ultra-Low Vsat PT IGBT
IXGX120N120B3 High Speed Low Vsat PT IGBT
IXGX120N60A3 Ultra-Low Vsat PT IGBT
IXGX120N60C2 IGBT

Full PDF Text Transcription

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GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE(sat) tfi(typ) = 600V = 64A ≤£ 1.8V = 88ns Symbol VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Mounting torque (TO-264) Mounting force (PLUS247) Maximum Ratings 600 V 600 V ±20 V ±30 V 64 A 400 A ICM = 200 A 460 -55 ... +150 150 -55 ... +150 1.13 / 10 20..120 / 4.5..27 W °C °C °C Nm/lb.in. N/lb. Maximum lead temperature for soldering 1.6mm (0.062 in.
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