Datasheet4U Logo Datasheet4U.com

IXGX32N170H1 - High Voltage IGBT

Features

  • z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGX35N120C HiPerFAST IGBT IXYS Corporation
IXGX35N120CD1 HiPerFAST IGBT IXYS Corporation
IXGX120N60B IGBT IXYS Corporation
IXGX28N140B3H1 1400V IGBT IXYS Corporation
IXGX50N60A2D1 IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX32N170AH1 High-Voltage IGBT
IXGX320N60A3 600V IGBT
IXGX320N60B3 Medium-Speed Low-Vsat PT IGBT
IXGX35N120B IGBT
IXGX35N120BD1 IGBT

Full PDF Text Transcription

Click to expand full text
High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 75 32 200 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 90 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 350 -55 ... +150 150 -55 ... +150 W °C °C °C FC Mounting force with chip 22...130/5...30 N/lb Maximum lead temperature for soldering 1.6 mm (0.062 in.
Published: |