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IXGX32N170AH1 - High-Voltage IGBT

Features

  • z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

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Part Number Description
IXGX32N170H1 High Voltage IGBT
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Full PDF Text Transcription

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High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V 1700 V E VGES VGEM Continuous Transient ±20 V ±30 V IC25 TC = 25°C T IC90 TC = 90°C IF90 ICM TC = 25°C, 1 ms 32 A 21 A 18 A 110 A E SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 A @ 0.8 VCES tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 μs L PC TC = 25°C T J TJM O Tstg 350 W -55 ... +150 °C 150 °C -55 ... +150 °C FC Mounting force with clip 22...130/5...30 N/lb Maximum lead temperature for soldering S 1.6 mm (0.062 in.
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