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IXGT15N120B2D1 - IGBT

Download the IXGT15N120B2D1 datasheet PDF. This datasheet also covers the IXGH15N120B2D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages: JEDEC TO-247AD & TO-268 z IGBT and anti-parallel FRED in one package z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV CES VGE(th) I C = 250 μA, V GE = 0 V IC = 250 μA, VCE = VGE ICES VCE = VCES V =0V GE I GES V CE = 0 V, V GE = ±20 V VCE(sat) IC = ICE90, VGE = 15 Characteristic Values Min. Typ. Max. 1200 2.5 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH15N120B2D1-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXGT15N120B HiPerFAST IGBT IXYS Corporation
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IXGT15N120CD1 Low VCE(sat) IGBT IXYS Corporation
IXGT16N170 High Voltage IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT10N170 High Voltage IGBT
IXGT10N170A High Voltage IGBT
IXGT20N100 IGBT
IXGT20N120B High Voltage IGBT
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Full PDF Text Transcription

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Advance Technical Information HiPerFASTTM IGBT IXGH15N120B2D1 IXGT15N120B2D1 Optimized for 10-20 KHz hard switching and up to 100 KHz resonant switching VCES IC25 VCE(sat) tfi(typ) =1200 V = 30 A = 3.3 V = 137 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms V GE = 15 V, T VJ = 125°C, R G = 10 Ω Clamped inductive load TC = 25°C 1200 V 1200 V ±20 V ±30 V 30 A 15 A 60 A I = 40 A CM @ 0.8 V CES 192 W -55 ... +150 °C 150 °C -55 ... +150 °C Md Mounting torque (TO-247) Maximum lead temperature for soldering 1.6 mm (0.062 in.
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