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Advance Technical Information
PolarTM High Speed
IGBT
with Anti-Parallel Diode
for PDP Sustain Circuit
IXGQ85N33PCD1
VCES ICP VCE(sat)
= = ≤
330 V 340 A 2.1 V
Symbol V
CES
Test Conditions TJ = 25°C to 150°C
VGEM
IC25 ICP IDP IC(RMS)
SSOA (RBSOA)
TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% TJ ≤ 150°C, tp < 10 μs Lead current limit
VGE = 15 V, TVJ = 150°C, RG = 20 Ω Clamped inductive load, VCE < 300 V
PC TC = 25°C
TJ TJM T
stg
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body
Md Mounting torque
Weight
Maximum Ratings 330 V
TO-3P
±30 V
85 340 40
A GC
A E (TAB)
G = Gate
C = Collector
A E = Emitter TAb = Collector
75 A
ICM = 96
A
150
-55 ... +150 150 -55 ...
IXGQ85N33PCD1 Datasheet
