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Trench Gate High Speed
IGBT
For PDP Applications
IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1
VCES =
ICP
=
VCE(sat) ≤
330V 400A 1.8V
Symbol
VCES
VGEM
IC25 ICP IDP IC(RMS) PC
TJ TJM Tstg
TL TSOLD Md
Weight
Test Conditions TC = 25°C to 150°C Transient
TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limit TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220)(TO-3P) TO-263 TO-3P
150N33TC 150N33TCD1
Maximum Ratings
330
V
± 30
V
150 400
40 75
300
-55 ... +150 150
-55 ... +150
300 260 1.13/10
2.5 5.5
A A A A
W
°C °C °C
°C °C Nm/lb.in.
IXGQ150N33TCD1 Datasheet
